inchfabricating ni mn ga microtubes by diffusion of mn and


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Fabricating Ni-Mn-Ga microtubes by diffusion of Mn and Ga

Fabricating Ni-Mn-Ga microtubes by diffusion of Mn and Ga into Ni tubes Peiqi Zheng, Paul Lindquist, Bin Yuan * , Peter Müllner, David C. Dunand * Corresponding author for this work Fabricating NiMnGa microtubes by diffusion of Mn and Ga After interdiffusion and homogenization of Mn and Ga at 1000 degrees C for 24-36 h, Ni-Mn-Ga tubes with similar to 300 and similar to 900 gm inner and outer diameters were obtained with homogeneous radial composition distribution, independently of the diffusion sequences (i.e., Mn and Ga diffused sequentially or simultaneously). "Fabricating NiMnGa Microtubes by Diffusion of Mn and After interdiffusion and homogenization of Mn and Ga at 1000 °C for 2436 h, NiMnGa tubes with ~300 and ~900 m inner and outer diameters were obtained with homogeneous radial composition distribution, independently of the diffusion sequences (i.e., Mn and Ga Mn Interstitial Diffusion in Ga Mn Asdiffusion of compensating defects. Using ab initio analy-sis we elucidate possible pathways for Mn I diffusion, considering the effect of Mn Ga-Mn I complexes and elec-tric elds induced by the high concentrations of Mn Ga acceptors. The calculated energy barrier agrees with our measured value of 0:7 0:1eV. These results offer new AboutThe steel grades involved include 40Cr, 35CrMo, 42CrMo, 30CrMoA, 5CrNiMo, 5CrMnMo, 2Cr13, 3Cr13, 4Cr13, 20SiMn, 30SiMn, H11, H13, 718, P20 and other alloy structural Ni-Mn-Ga:annealing for microstructure development Made available by U.S. Department of Energy Office of Scientific and Technical Information MFM domain imaging of textured Ni-Mn-Ga/MgO(100) thin Magnetic, micromagnetic, and texture properties of the martensitic thin films prepared by magnetron sputtering of Ni 49.5 Mn 28 Ga 22.5 target on MgO(100) wafer are studied as a function of film thickness. The films exhibit 220-fiber texture. Moreover, in contrast to thick films, a considerable in-plane texture component is giving rise to the Ni-Mn-Ga micro-trusses via sintering of 3D-printed inks Ni-Mn-Ga micro-trusses via sintering of 3D-printed inks containing elemental powders Shannon L. Taylor a, c, Ramille N. Shah a, b, c, David C. Dunand a, * a Department of Materials Science and Engineering, Northwestern University, 2220 Campus Dr. Cook Hall 2036, Evanston, IL, 60208, USA b Department of Surgery (Transplant Division), Northwestern University, 303 E. Superior St., 11th Floor Preparation of Ni-Mn-Ga Micropillars Using Focused Xe-ion We investigate the possibility of using focused Xe-ion (as an alternative to Ga-ion) beam milling (Xe-FIB) for microfabrication on Ni-Mn-Ga magnetic shape memory single crystals. We started with the most basic structures such as micropillars. Xe-FIB working conditions of 30 kV/100 nA results in large curtaining effect thus for micrometre sized Tuning of Magnetic Properties of NiMnGa Glass-Coated Apr 03, 2018 · Abstract:We have observed that annealing conditions strongly affect the temperature dependence of magnetization and Curie temperature of NiMnGa glass-coated microwires. After long (6 h) annealing of the microwires at 773 K, a ferromagnetic ordering is obtained with T c 300 K, which is beneficial for a magnetic solid-state refrigeration. The annealed samples also exhibit the exchange Ni-Mn-Ga-Co-Gd High-Entropy AlloyMaterials 2021, 14, 2514 2 of 13 Numerous studies have reported that the main phase of a high-entropy alloy is of type B2, to which the structure of the Ni2MnGa-based FSMAs matrix belongs [1519]. CN102924875A - Novel Ni-Mn-Ga resin based composite The invention provides a novel Ni-Mn-Ga resin based composite material and a preparation method of the Ni-Mn-Ga resin based composite material. The composite material is prepared by the following design scheme and process:firstly, preparing Ni-Mn-Ga powder particle as functive, stirring E51 epoxy resin matrix with a curing agent in order to mix uniformly, adding Ni-Mn-Ga powder particle Mn interstitial diffusion in (ga,mn)as Read by QxMDWe present a combined theoretical and experimental study of the ferromagnetic semiconductor (Ga,Mn)As which explains the remarkably large changes observed on low-temperature annealing. Careful control of the annealing conditions allows us to obtain samples with ferromagnetic transition temperatures up to 159 K. Ab initio calculations, in situ Auger spectroscopy, and resistivity (PDF) Autonomous generator based on Ni­Mn­Ga In this work, we suggest the temperature­induced resistivity change at the martensitic transformation in the Ni­Mn­Ga ferromagnetic shape memory alloy as a driving mechanism enabling periodic signal generation. We demonstrated its practical Tuning of Magnetic Properties of Ni-Mn-Ga Glass-Coated adshelp[at]cfa.harvard.edu The ADS is operated by the Smithsonian Astrophysical Observatory under NASA Cooperative Agreement NNX16AC86A

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